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| SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - JANUARY 1996 FEATURES * VDS - 200V * RDS(ON) - 10 7 ZVNL120G D PARTMARKING DETAIL - ZVNL120 D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 200 320 2 20 2 -55 to +150 UNIT V mA A V W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage SYMBOL MIN. BV DSS 200 0.5 1.5 100 10 100 500 10 10 200 85 20 7 8 8 20 12 MAX. UNIT CONDITIONS. V V nA A A mA mS pF pF pF ns ns ns ns V DD25V, I D=250mA V DS=25V, V GS=0V, f=1MHz I D=1mA, V GS=0V I D =1mA, V DS= V GS V GS= 20V, V DS=0V V DS=200V, V GS=0V V DS=160V, V GS=0V, T=125C(2) V DS=25V, V GS=5V V GS=5V, I D=250mA V GS=3V, I D=125mA V DS=25V, I D=250mA Gate-Source Threshold Voltage V GS(th) Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) I GSS I DSS I D(on) R DS(on) Forward Transconductance(1)(2) g fs Input Capacitance (2) Common Source Output Capacitance (2) C iss C oss Reverse Transfer Capacitance (2) Crss Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) t d(on) tr t d(off) tf (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3 - 420 ZVNL120G TYPICAL CHARACTERISTICS 1.6 VGS= 10V 8V 6V 5V 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 30 35 40 45 3V 2V 50 4V VGS= 10V 8V 6V 4V 0.6 ID(On) Drain Current (Amps) 1.0 ID(On)Drain Current (Amps) 1.4 1.2 0.8 0.4 3V 0.2 2V 0 0 2 4 6 8 10 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics 1.6 ID(On) Drain Current (Amps) VDS= 40V 20V 500 gfs-Transconductance (mS) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 9 10 400 VDS=25V 10V 300 200 100 0 1 2 3 4 5 6 7 8 9 10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Transfer Characteristics Transconductance v gate-source voltage 500 100 gfs-Transconductance (mS) 300 200 100 0 0 VDS=25V C-Capacitance (pF) 400 80 60 Ciss 40 20 Coss Crss 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 10 20 30 40 50 ID- Drain Current (Amps) VDS-Drain Source Voltage (Volts) Transconductance v drain current Capacitance v drain-source voltage 3 - 421 ZVNL120G TYPICAL CHARACTERISTICS RDS(on)-Drain Source On Resistance () 16 100 VGS=2V 3V 4V VGS-Gate Source Voltage (Volts) 14 ID= 700mA 12 10 VDS= 50V 100V 150V 5V 10 10V 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100 1000 Q-Charge (nC) ID-Drain Current (mA) Gate charge v gate-source voltage RDS(ON) -Drain Source Resistance () On-resistance v drain current 100 2.4 Normalised RDS(on) and VGS(th) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -80 -60 -40 -20 0 VGS=5V ID=250mA Re e nc ta sis RD ) on S( 10 ID= 1A 0.5A 0.1A VGS=VDS ID=1mA Gate Th reshold Voltage VGS(th) 20 40 60 80 100 120 140 160 e rc ou -S ain Dr VGS=3V ID=125mA 1 1 10 20 VGS-Gate Source Voltage (Volts) Tj-Junction Temperature (C) On-resistance vs gate-source voltage Normalised RDS(on) and VGS(th) vs Temperature 3 - 422 |
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